| 摘要 |
PURPOSE:To form an electrode in a short period of time etching with a wide lift-off region, by etching a double-layered mask different in etching characteristics to make an aperture and form eaves, piling up electrode material, and lifting off an upper layer mask and electrode material thereupon. CONSTITUTION:First and second mask layers 4, 5 are piled up on a thin film 2 of a substrate 1. The layers 4, 5 are different in etching characteristics. An aperture 6 of the layer 4 is etched excessively and widened through an aperture 7 of the layer 5. Next, electrode material 3' is evaporated on the whole surface. A mask layer 9 is placed in the apertures 6, 7 and near eaves 8. The electrode material 3' and second mask layer 5 are etched and removed selectively. Next, the remnant mask layer 5 and electrode material 3' thereupon are lifted off. An electrode 3 is formed at a desirable position (aperture 6) on the thin film 2. This constitution facilitates the lift-off by invasion of etchant a. The electrode can be formed by lift-off method when a lift-off region L is wide. |
