| 摘要 |
PURPOSE:To improve reliability without generating deterioration due to hot carriers while decreasing the number of manufacturing processes by controlling the potential of the base region of a bipolar transistor so as to be conformed to outer potential while using a region of the opposite conductivity type as a control gate. CONSTITUTION:The potential of the base region 12 of a bipolar transistor is controlled so as to be conformed to outer potential when a region 13 being formed in the base region 12 and having a conductivity type opposite to that of the base region 12 is operated as a control gate. Consequently, even when hot carriers A having high energy are generated by an avalanche effect in the base-collector depletion layer of the bipolar transistor, a function as the control gate of the opposite conductivity type region 13 is not subject ton effect by the hot carriers A at all. Accordingly, a semiconductor device, in which deterioration due to the hot carriers A is not generated and which has high reliability and a few manufacturing processes, is acquired. |
