发明名称 OUTPUT BUFFER AND PROTECTIVE CIRCUIT; SEMICONDUCTOR STORAGE DEVICE CONTAINING THEM; ITS TYPE DEVELOPMENT, LAYOUT SYSTEM AND TEST SYSTEM
摘要 PURPOSE:To efficiently develop types of a semiconductor storage device by a method wherein a common semiconductor substrate provided with the following is prepared and is owned jointly by a plurality of package specifications: a plurality of bonding pads arranged in optimum positions according to individual package shapes; a bonding pad, for control, which makes selectively effective a plurality of buffers corresponding to the pads and the plurality of bonding pads. CONSTITUTION:On a common semiconductor substrate of a dynamic RAM, names of pads used in the dynamic RAM according to DIP and SOJ package specifications are mentioned at the inside of a dotted line; names of pads used in the dynamic RAM according to ZIP package specifications are mentioned at its outside. This dynamic RAM is classified into a total of 21 product types according to its bit constitution, its operating mode and its package shape. Accordingly, when a semiconductor substrate which is common to all of the 21 product types is prepared and one part of its photomask is changed or a bonding treatment is executed selectively on a prescribed pad, either of the product types can be realized in a alternative way.
申请公布号 JPH02246147(A) 申请公布日期 1990.10.01
申请号 JP19890065838 申请日期 1989.03.20
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 TAKAHASHI YASUSHI;IWAI HIDETOSHI;OGUCHI SATOSHI;NAKAMURA TAKASHI;UCHIYAMA HIROYUKI;TAKEKUMA SHUNJI;SAKOMURA SHIGETOSHI;MIYAZAWA KAZUYUKI;ISHIHARA MASAMICHI;HORI RYOICHI;KIZAKI TAKESHI;KOYAMA YOSHIHISA;II HARUO;MURANAKA MASAYA;AOYANAGI HIDETOMO;MATSUURA NOBUMI
分类号 G11C11/41;G11C11/34;G11C11/401;G11C11/403;G11C11/406;G11C11/407;G11C11/408;G11C29/00;G11C29/12;H01L21/60;H01L21/66;H01L21/82;H01L21/822;H01L21/8242;H01L23/50;H01L27/04;H01L27/10;H01L27/108 主分类号 G11C11/41
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