发明名称 |
PLASMA TREATMENT DEVICE |
摘要 |
PURPOSE:To form plasma atmosphere of approximately the same concentration without leaking plasma discharge outside and enclosed space and to enable formation of a coating of good uniformity even on a substrate of a large area by forming the closed space with a substrate susceptor which is movable in one direction and a pair of electrode shields. CONSTITUTION:A pair of shields 4 are provided between a reaction chamber inner wall and a discharge electrode 3. The electrode shield 4 forms a closed space with a substrate susceptor 5 for arranging a plurality of substrates 1 between the discharge electrodes 3 unparallel thereto. The substrate susceptor 5 is movable in one direction, therefore, plasma treatment can be carried out successively by moving the susceptor whereto a plurality of substrates are held before and after plasma treatment. |
申请公布号 |
JPH02246111(A) |
申请公布日期 |
1990.10.01 |
申请号 |
JP19890066525 |
申请日期 |
1989.03.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SAKAMA MITSUNORI;FUKADA TAKESHI;HIROSE NAOKI;INUSHIMA TAKASHI |
分类号 |
H01L21/302;H01L21/205;H01L21/3065;H01L21/31;H01L31/04 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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