| 摘要 |
PURPOSE:To make the waveform of a generated charge pulse signal constant and to make it possible to measure the accurate distribution of wave heights by forming a counter electrode in the crystal orientation face so that the difference between the electron mobility and the hole mobility in a semiconductor becomes the minimum value. CONSTITUTION:For example, a sensor array 1 and a semiconductor sensor comprising cadmium telluride (CdTe) are arranged in an individual element 2. A radiation quantum signal from the element 2 is amplified in a current/voltage converting type amplifier 3. The signal is outputted into a wave height discriminating circuit as an incident radiation signal. At this time, the response time of the semiconductor sensor is determined by the time electron and hole bodies generated in the semiconductor reach each electrode. The current of the generated electrons or holes is proportional to the generated charge. When the current is measured without integrating the charge, the generated signal depends on the place where the charge is generated. This depends on the difference in the mobilities of the electrons and the holes. When the constitution of the semiconductor sensor has the structure wherein the difference in mobilities of the electrons and the holes is less is formed, the accurate distribution of the wave heights can be measured.
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