SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To grow a large area hetero body structure of hierarchized Gex Si1-x alloy having a low-level threading transfer defect on silicon by growing germanium-silicon alloy at a high temperature and increasing the germanium component with a gradient more than a specified value. CONSTITUTION: A silicon substrate 3 is prepared. The substrate is a sort of standard (100) direction silicon wafer generally used for producing an integrated circuit. A large area hierarchized layer 2 of germanium-silicon alloy Gex Si1-x is grown on the silicon substrate 3 at a high temperature. A growing process is chemical vapor deposition(CVD) or molecular beam epitaxy(MBE). A substrate growth starting temperature is in a range of 850 to 1100 deg.C. Thus, the area of hierarchized alloy exceeds 1200 micrometer 2. The start composition is preferably pure silicon. The germanium forms Gex Si1-x with the gradient less than about 25%/micron.