| 摘要 |
The photosensor comprises a circuit substrate, a thin film transistor formed on the circuit substrate and an amorphous silicon photodiode formed on the substrate integral with the thin transistor between the drain and gate electrodes of it. Also formed on the circuit substrate adjacent to the thin film transistor and photodiode are a charging switch element for coupling the photodiode to a DC power source to charge an inter-electrode capacitance of the photodiode. A charge storage capacitor charged by a channel current of the thin film transistor is controlled by an inter-electrode capacitance voltage of the photodiode which varies in response to incident light after the inter-electrode capacitance has been charged.
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