发明名称 |
Deposition of boron-containing films from decaborane |
摘要 |
Depopsition of a boron nitride film is carried out by introducing decaborane and dry nitrogen or ammonia into a plasma-assisted chemical vapor deposition chamber. The nitrogen or ammonia partial pressure should provide an excess over the decarborane pressures for example 200 milliTorr of N2 or NH3 and 50 MilliTorr of B10H14. Other film layers can also be produced starting from decaborane.
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申请公布号 |
US4957773(A) |
申请公布日期 |
1990.09.18 |
申请号 |
US19890309213 |
申请日期 |
1989.02.13 |
申请人 |
SYRACUSE UNIVERSITY |
发明人 |
SPENCER, JAMES T.;DOWBEN, PETER A.;KIM, YOON G. |
分类号 |
C23C16/34;H01L21/225;H01L21/318 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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