发明名称 Deposition of boron-containing films from decaborane
摘要 Depopsition of a boron nitride film is carried out by introducing decaborane and dry nitrogen or ammonia into a plasma-assisted chemical vapor deposition chamber. The nitrogen or ammonia partial pressure should provide an excess over the decarborane pressures for example 200 milliTorr of N2 or NH3 and 50 MilliTorr of B10H14. Other film layers can also be produced starting from decaborane.
申请公布号 US4957773(A) 申请公布日期 1990.09.18
申请号 US19890309213 申请日期 1989.02.13
申请人 SYRACUSE UNIVERSITY 发明人 SPENCER, JAMES T.;DOWBEN, PETER A.;KIM, YOON G.
分类号 C23C16/34;H01L21/225;H01L21/318 主分类号 C23C16/34
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