| 摘要 |
PURPOSE:To realize a high speed operation and an enhanced breakdown withstanding capacity by a method wherein an independent insulating region is provided between a diode and a transistor emitter region, in a compound type transistor composed of a transistor and a diode, reverse to each other as regards current direction, formed into a single chip. CONSTITUTION:The rear side of an N<-> type semiconductor substrate 1 is covered by an N<+> type collector layer 2 formed by diffusion, and the front surface is covered with a P type base layer 3 formed by diffusion. Next, donors are diffused into the layer 3 for the formation of an N<+> type emitter region 4. And, at the same time, a ring shaped N<+> type isolating region 12 is formed, which goes through the region 4, with help of an insulating film 11, and an exposed part 5 of the layer 3 exposed in the region 12 is used as a diode. After this, to furnish the diode with a high speed feature, a region 10 is provided here, diffused with such a heavy metal as Au and reaching the layer 2, which works as an insulating resistor 9'. The rear surface of the layer 2 is provided with a collector electrode 6, the region 4 with an emitter electrode 7, and the layer 3 with a base electrode 8. |
