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发明名称
TREATING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH02235337(A)
申请公布日期
1990.09.18
申请号
JP19890055840
申请日期
1989.03.08
申请人
NEC CORP
发明人
TSUJI MIKIO
分类号
H01L21/306;H01L21/304
主分类号
H01L21/306
代理机构
代理人
主权项
地址
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