发明名称 PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE
摘要 <p>PURPOSE:To prevent the conductive phenomenon of a thin film transistor by photoirradiation from being caused by forming an island-shaped electrode film of a gate electrode which consists of an opaque metallic film and is connected to a scanning signal line through a transparent conductive film and taking the island-shaped electrode film as a photomask so that the pattern of the semiconductor layer of the thin film transistor may be formed. CONSTITUTION:The gate electrode GT consists of the opaque metallic film g12 and is connected to the scanning signal line through the transparent conductive film g11. Since the pattern of the semiconductor layer AS of the thin film transistor TFT is formed by taking the island-shaped electrode film of the gate electrode GT as the photomask, the positional deviation of the island- shaped electrode film of the gate electrode GT from the semiconductor layer AS is not caused and backlight is not projected to the semiconductor layer AS. Thus, the conductive phenomenon of the thin film transistor TFT by the photoirradiation is prevented from being caused.</p>
申请公布号 JPH02234128(A) 申请公布日期 1990.09.17
申请号 JP19890053822 申请日期 1989.03.08
申请人 HITACHI LTD 发明人 TANIGUCHI HIDEAKI;ORITSUKI RYOJI;SASANO AKIRA
分类号 G02F1/13;G02F1/136;G02F1/1368;H01L21/336;H01L29/78;H01L29/786 主分类号 G02F1/13
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