| 摘要 |
<p>PURPOSE:To enable the formation of a photoelectron radiator sensitive to long wave and light by applying the constitution wherein a photoelectron emitted from the inside of one conductive material to another semiconductor due to irradiated light is made to travel in the thickness-wise direction of the aforesaid semiconductor and an external photoelectron is emitted from the surface of the semiconductor. CONSTITUTION:A thin film p-type semiconductor 12 is, for example, GaAs and the surface barrier thereof is reduced with an adsorption layer 11 comprising CsO or the like. A metal 13 is jointed to the inner surface of the semiconductor 12 and the barrier to be overcome with internal photoelectron emission is formed therein. The conventional GaAs semiconductor already embodies the constitution wherein Cs-O is adsorbed into the aforesaid p-type semiconductor film 11 and substantially forms a negative surface barrier. Also, there is available a photoelectron emission surface sensitive to light having wavelength up to 870nm determined by an energy gap between the semiconductor and the barrier. Furthermore, when the conductor material is exposed to the radiation of light having higher energy than the barrier, an internal photoelectron is emitted from the other semiconductor, getting over the barrier. According to the aforesaid construction, it is possible to easily form a photoelectron radiator sensitive to long wave and light.</p> |
