发明名称 |
IDENTIFICATION OF CRYSTAL ORIENTATION AND MECHANISM DEVICE FORMED USING THE IDENTIFICATION |
摘要 |
PURPOSE:To precisely conform the direction of a photomask pattern to be transferred on a film to a crystal orientation by a method wherein the crystal orientation is identified using two or more of the same etching patterns. CONSTITUTION:Circular oxide film removal parts 3 are reliably formed on a thermal oxide film 2 on an Si wafer 1 and the wafer 1 under the removal parts 3 is subjected to anisotropic etching to form quadrangular pyramid-shaped hole patterns 7. A parallel ruling in the visual field of an optical microscope is used and two sides of each pattern 7 are superposed on the parallel ruling. That is, two pieces of the patterns 7 arranged on a straight line are selected and a crystal axis direction <110> is identified. Two pieces of these patterns 7 are aligned with an alignment pattern 9 of a photomask 8, a photomask pattern 12 is transferred on the film 2 and an anisotropic etching is performed. As a result, alignment of a very good accuracy that the alignment deviation of the photomask pattern 12 from a crystal orientation is + or -0.05 deg. or less can be attained. |
申请公布号 |
JPH02230751(A) |
申请公布日期 |
1990.09.13 |
申请号 |
JP19890049824 |
申请日期 |
1989.03.03 |
申请人 |
HITACHI LTD |
发明人 |
MORIZAKI HIROSHI;KATO TAKESHI;ONOZATO AKIMASA;SATO KAZUO;TANAKA SHINJI;MIZUISHI KENICHI |
分类号 |
G01N33/00;H01L21/027;H01L21/66;H01L29/04 |
主分类号 |
G01N33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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