| 摘要 |
A method for forming gate oxide layers comprising the steps of providing a silicon substrate; forming a first oxide layer on the substrate; forming a first barrier layer at an interface between the first oxide layer and the substrate; forming a second oxide layer at an interface between the first barrier layer and the substrate; forming a second barrier layer at an interface between the second oxide layer and the substrate; and forming a third oxide layer at an interface between the second barrier layer and the substrate. One of the main characteristics of the invention is that of forming a first barrier layer between the first oxide layer and the second oxide layer, and forming a second barrier layer between the second oxide layer and the third oxide layer. As a result, the present invention is capable of increasing the breakdown voltage, minimising the tunneling effect and decreasing the amount of trapped oxide charges in a gate oxide layer.
|
