| 摘要 |
PURPOSE:To realize a rectification circuit having high rectification efficiency by dividing a Schottky barrier so as to form a Schottky diode out of a plurality of unit cells, and selecting the area of the Schottky barrier part and the thickness of a low concentration semiconductor layer so that the area of a high concentration semiconductor substrate may be larger than the total area of the unit cells. CONSTITUTION:A Schottky barrier 3 is divided by insulating substance, for example, SiO2 films 7 so as to put it in such structure that the Schottky diode is composed of a plurality of unit cells 8 which are formed by being divided at A and B lines. And it is so constituted that the currents from the Schottky junction of each cell 8 expands gradually within a low concentration semiconductor layer 2 and flow into a high concentration semiconductor substrate 1. And the area of a Schottky barrier part 3a and the thickness of a low concentration semiconductor layer are selected so that the unit cell may have a spread angle of about 45 deg.C in depth direction, which enables respective current lines to avoid overlapping each other between several adjacent unit cells and the currents to flow into the high concentration semiconductor substrate 1. Accordingly, the area of the Schottky barrier is made small, so the reverse currents becomes small by the area ratio of the Schottky barrier. Hereby, rectification efficiency can be improved. |
