| 摘要 |
<p>PURPOSE:To perform the reception of a high-speed pulse, by providing a semiconductor substrate forming a photodetector, and light untransmittable and conductive thin film at the same potentials that of a specified area of a circuit constituting the same detector, forming on the specified area on the surface of said detector via an insulation film. CONSTITUTION:At a specified region of a semiconductor substrate 1, base layers 3a and 3b of a P<+> type formed by using an oxide film 2 as a mask are provided. At the specified region of the layers 3a and 3b, N<+> type emitter layers 4a and 4b are formed. The layer 4a is in Darlington connection to the base layer 3b of another amplifying transistor (TR) with a winding 5 formed in a contact hole 2a and opened to the film 2. At the emitter layer 4b of the amplifying TR, a pickup wiring electrode 6 is formed via a contact hole 2b opened to the film 2. On the surface of the film 2, the wiring 5 and the electrode 6, an insulation film 7 is provided. A light untransmittable and conductive thin film 8 serving as an electromagnetic screen and connected to the electrode 6 via a contact hole 7a is formed.</p> |
