| 摘要 |
PURPOSE:To facilitate the manufacture of a fine memory cell by a method wherein, in a semiconductor storage device constituting one switching transistor and one charge storage capacitor as minimum units, both a channel region and a source.drain region are not parallel to both word lines and bit lines. CONSTITUTION:A semiconductor device is constituted of the following; active regions 1.1, word lines 1.2, bit line contact holes 1.3, bit lines 1.4, storage capacitor part contact holes 1.5, and the lower electrode 1.6 of a charge storage capacitor. A special feature of this method in the above-mentioned constitution is that, in order to make the word line 1.2 secure a sufficient channel length, the width is wide in the active region and narrow in an element isolation oxide film forming part. That is, a part of the active region 1.1 is constituted of a region inclined at 45 deg. to the word line 1.2, and a region rectangular to the word line. Thereby, a fine cell required for a DRAM of, e.g. 16 megabit level can be manufactured by an ordinary photolithography method. |
