| 摘要 |
PURPOSE:To reduce the series resistance of a diode by a method wherein, in a diode in which a junction part and a first ohmic electrode positioned in the vicinity of the junction part are arranged on the surface of a semiconductor substrate and a second ohmic electrode is arranged on its rear, while the first electrode is electrically connected with the second electrode. CONSTITUTION:On the surface of, e.g. an N<++> type GaAs substrate 1, an N-type GaAs layer 2 is epitaxially grown, and an ohmic electrode 3 is formed by using (Au-Ge)Au. The whole part is covered with an insulating film 4. Said electrode is positioned at the part corresponding with a Schottky junction part formed here in the later process, and has an aperture 3a. In the film 4, an aperture 4a is formed, and a Schottky electrode 5 is formed by using W, Al and the like, which is made to generate a Schottky junction. Said electrode 5 constitutes an anode on the layer 2 through the aperture 4a. A pad electrode 6 is fixed by using Ti/Au, and similarly a pad electrode 7 is arranged on the end-portion through the aperture. On the rear of the substrate 1, an ohmic electrode 8 turning to a cathode is fixed, and connected with the electrode 3. |
