| 摘要 |
PURPOSE:To obtain an indium oxide.tin oxide(ITO) sintered compact having plane surface of sintered granules and small reflectivity of light in a visible light region and excellent as a dark green sputtering target by sintering ITO powder at a specific high-temperature. CONSTITUTION:Indium oxide tin oxide(ITO) is sintered at a temperature exceeding 1400 deg.C and crystal thereof is grown until at least part or all of sintered granule surface becomes plane. At this time, when sintering temperature is <=1400 deg.C, growth of characteristic above-mentioned sintering granules do not proceed and when temperature of the composition is raised to 1800 deg.C or above, sintering granules are grown, but tin is volatilized. Therefore, especially preferable temperature is 1450-1700 deg.C. The enough retention time at the sintering temperature is from 5hr to 20hr and raising and lowering rate is especially preferably <=100 deg.C/hr. Highly crystalline ITO sintered compact having <=20% reflectivity of light in light visible light region, showing dark green and having performance excellent as sputtering target for preparing transparent electroconductive film is obtained by the above-mentioned method. |
