| 摘要 |
PURPOSE:To prepare silicon nitride added with fluorine onto a substrate by adding heat energy or heat energy and electric energy to a reactive gaseous mixture composed of gaseous fluoride of silicon expressed by the specific formula and gaseous nitride. CONSTITUTION:A substrate 2 consisting of silicon, etc. imposed on a holder 22 in a reaction vessel 1 is heated to about <=500 deg.C, more preferably about 100-400 deg.C by a resistance heating heater 3 enclosing the vessel 1 and if necessary, electric energy is further added thereto by an electric energy supply device 5 and a high- frequency energy supply coil 4. Gaseous fluoride of silicon such as SiF2, etc. expressed by HnSiFm (m; 1, 2, 3, n; 0-3) and gaseous nitride such as NH3, N2H4, non-oxidized hydrazide, NF3, etc. are introduced into the vessel 1 and the inside of the vessel 1 is evacuated to a vacuum by a vacuum pump 14. The silicon nitride film which contains an extremely low concn. of dissolved oxygen and is added with fluorine is thus formed on the substrate 1. |
