| 摘要 |
PURPOSE:To improve the efficiency of photoelectric conversion by inserting as an antireflection film a particular semiconductor layer between interfaces of different refractive index semiconductor layers. CONSTITUTION:A plurality of photovoltaic devices are laminated, and a semiconductor layer 3 is inserted as an antireflection film between interfaces of a refractive index na semiconductor layer (a) and a refractive index nb semiconductor layer b. The semiconductor layer (c) has a different composition ratio of elements thereof from that of elements of the semiconductor layer (b) and has the refractive index (n) satisfying a relation n=(na.nb)1/2. The semiconductor layer (c) further comprises a semiconductor film having a thickness d=lambda/4n where lambda is a peak wavelength of spectral sensitivity of each of the photovoltaic devices adjacent to each other in a direction of transmission of light. Hereby, high efficiency of photoelectric conversion is assured. |
