METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A semiconductor device fabrication method is provided to reduce a CD(Critical Dimension) and stabilize a gate profile by reducing the difference of profiles when dual gate formation. CONSTITUTION: A method for manufacturing semiconductor device comprises the steps of forming a gate oxide(22) on a silicon substrate(21), forming an undoped conductive layer(23) on the gate oxide(22), defining the conductive layer(23) by a first region and a second region, firstly implanting impurities of a first conductive type into the first region of the conductive layer(23) and secondly implanting impurities of a second conductive type into the second region, and simultaneously forming dual gate electrodes(23a,23b) by selectively removing the conductive layer(23) using mixed gas of HBr and Cl2, wherein HBr: Cl2 = 2: 1 less than is used when low power, and HBr: Cl2 = 2: 1 more than is used when high power.