| 摘要 |
PURPOSE:To obtain the title resistance element provided with both varistor characteristics and capacitor characteristics and also having high varistor voltage, a large non-linear coefficient and large withstanding surge voltage by a method wherein a specifically prescribed quantity of specific oxide is contained in the element consisting of (Sr1-x-yBaxCay)TiO3 and Nb, W and Ta or a rare- earth element oxide. CONSTITUTION:Against the base material consisting of (Sr1-x-yBaxCay) TiO3 (provided that 0.001<=x<=0.3, y<=0.25) of 98.0 to 99.9mol% and an oxide, containing at least a kind selected from Nb, W, Ta and a rare-earth element, of 0.1 to 2.0mol%, the total quantity of 0.01 to 2.0mol% of (Na2O>0, TiO2>0, V2O5>=0, and MoO3>=0) by converting sodium oxide, titanium oxide, banadium oxide, and molybdenum oxide into Na2O, TiO2, V2O5 and MoO3, is contained. For example, the base material of the semiconductor porcelain after sintering of the above-mentioned composition is coated with the mixed oxide of Na2O, TiO2, V2O5 and MoO3 together with varnish, and a porcelain unit to be used for an element is obtained by conducting a heat treatment thereon at 1200 deg.C for two hours in the air. |
