RESIST COMPOSITION AND FINE PATTERN FORMING METHOD USING SAME

摘要

PROBLEM TO BE SOLVED: To reduce the size of an opening formed in a photoresist pattern to the desired size only through one thermal flow step and to easily control the flow rate in the flow step while minimizing the deformation of the vertical profile of the photoresist pattern. SOLUTION: A resist solution used for forming a photoresist pattern by a photolithography process is mixed with a crosslinking agent capable of causing a partial crosslinking reaction of the resist solution by heat treatment at the glass transition temperature or softening start temperature of the resist solution or above to obtain the objective resist composition. The resist solution comprises a novolak resin and a DNQ compound.