| 摘要 |
PURPOSE:To improve a built-in potential and to improve photovoltaic characteristic by providing a silicon film containing nitrogen at least at part of a boundary between the conductive surface of a substrate and an impurity layer. CONSTITUTION:An impurity layer 4 made of one conductivity type semiconductor layer containing silicon and a photoactive layer 5 made of a semiconductor layer in contact with the layer 4 are disposed in this order on the conductive surface of a substrate 1, and a silicon film 3 containing nitrogen is provided at least part of a boundary between the conductive surface of the substrate 1 and the layer 4. Accordingly, the film 3 is operated as a primary layer for accelerating crystallization from an initial stage of growing the layer 4 to be grown next. Thus, a built-in potential is improved, and photovoltaic characteristic is improved. |
