| 摘要 |
PROBLEM TO BE SOLVED: To provide a reverse side-grinding method for easily removing silting in a grinding blade that can easily crack a semiconductor substrate, and for improving productivity, when the reverse side of the semiconductor substrate is to be ground, and to provide a reverse side-grinding apparatus. SOLUTION: A gallium arsenide substrate Wc is set to a first rotary table 12 for reverse side grinding by the grinding blade 14 of a grinding rotor 16, and 150 substrates where substrate cracks, which are not caused by the silting in the grinding blade 14, are subjected to reverse side grinding. After that, the grinding rotor 16 is moved to a second rotary table 22, and a set silicon block S is round for approximately 10 seconds or the like, thus removing the silting by the grinding; and at the same time, giving fitness to fine diamond that newly appears, and hence resuming the reverse side grinding of the gallium arsenide substrate Wc, by returning to the first rotary table 12, as it is.
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