| 摘要 |
The hybrid IC comprises semiconductor pellets (16a,16b,16c) formed on a substrate of the signal lead frame; leads (15) extended from the neighborhood of a landing part (14); bonding wires (17); and a moulding member (18). A semiconductor pellet (16a) has a large power transistor diffusion process form having electrodes separately formed on the front and back surfaces of the substrate. Two semiconductor pellets (16a)(16b) have small power linear IC diffusion form having electrodes formed on the surface of an isolating layer.
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