| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which excellent low-resistance ohmic contact characteristics can be realized even without providing a so-called cap layer when utilizing an aluminum alloy thin film as an electrode layer in the case of manufacturing a liquid crystal display element or a semiconductor element. SOLUTION: In the semiconductor device which comprises a wafer, a semiconductor layer formed on the wafer and an electrode layer comprising wiring or an electrode, the semiconductor device includes a portion wherein the semiconductor layer and the electrode layer are directly bonded, and the electrode layer is formed from the aluminum alloy thin film containing transition metals such as nickel, cobalt, iron and the like. COPYRIGHT: (C)2005,JPO&NCIPI
|
