| 摘要 |
PURPOSE:To prevent a short circuit between an electrode wiring and a semiconductor substrate by fluidizing an insulating film containing an impurity in an upper layer through heat treatment after an etching process and forming a channel stopper while using the insulating film as a mask. CONSTITUTION:An SiO2 film 2 and an Si3N4 film 3 are formed onto the main surface of a P type Si substrate 1, and a PSG film 20 is shaped. The film 20 and the film 3 are etched while employing a photo-resist film 4 formed in a channel region as a mask. The film 4 is removed, the film 20 is fluidized through heat treatment, sections in the vicinity of the ends of the channel region are coated with flowing-out PSG films 21, the P channel region is coated with a photo-resist film 41, and B ions are implanted to shape a channel stopper 5 in an N channel field region. A field SiO2 film 6 is formed. According to said manufacture, Al wirings 11 and the substrate 1 are not short-circuited electrically through the stopper 5 when contact windows 10 are bored and the wirings 11 are shaped in the succeeding process. |
