发明名称 TESTING METHOD OF DETECTING THE DEFECTIVE MEMORY CELL IN PROGRAMMABLE DEVICES
摘要 The method involves the switching of current between a first cell to be tested, and a second cell. The first cell is an unwritten-in cell and the second a written-in cell. A variation in voltage induced across the first cell within a given time period after the switching of current is detected. The detected variation of the voltage is compared with a given threshold level, whereby if the voltage variation is lower than the threshold level, a faulty cell is indicated. The detection of the voltage variation is carried out at an output terminal through at least one comparator. This converts the varying voltage of an analogue signal to a binary output signal, whereby the variation of voltage is measured by an external testing device.
申请公布号 KR900006143(B1) 申请公布日期 1990.08.24
申请号 KR19860007556 申请日期 1986.09.09
申请人 FUJITSU CO., LTD. 发明人 HUKUYAMA DOSITAKA
分类号 G11C17/00;G11C29/00;G11C29/04;G11C29/24;G11C29/50;(IPC1-7):G11C29/00 主分类号 G11C17/00
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