| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to reduce a process procedure for forming a floating gate of a flash memory device by using a photolithography method in one time only. An isolation layer(33) is formed on a semiconductor substrate(31) to define an active region. A tunnel oxide layer(35) is formed on the active region of the semiconductor substrate and a impurity doped polycrystalline silicon is deposited on the isolation layer and the tunnel oxide layer to form agate layer(37). A photoresist pattern(39) is formed on the gate layer. The photoresist pattern has an opening unit for exposing a part corresponding to the isolation layer. Impurities are ion-implanted into the part exposed by the opening unit of the gate layer by using the photoresist pattern as a mask, thereby forming an ion implantation region(43). The ion implantation region is etched through a dry etching method by using the photoresist pattern as a mask to form a floating gate. The photoresist pattern is removed.</p> |
