| 摘要 |
A method of controlling strain in a single-crystal, epitaxial oxide film, includes preparing a silicon substrate; forming a silicon alloy layer taken from the group of silicon alloy layer consisting of Si<SUB>1-x</SUB>Ge<SUB>x </SUB>and Si<SUB>1-y</SUB>C<SUB>y </SUB>on the silicon substrate; adjusting the lattice constant of the silicon alloy layer by selecting the alloy material content to adjust and to select a type of strain for the silicon alloy layer; depositing a single-crystal, epitaxial oxide film, by atomic layer deposition, taken from the group of oxide films consisting of perovskite manganite materials, single crystal rare-earth oxides and perovskite oxides, not containing manganese; and rare earth binary and ternary oxides, on the silicon alloy layer; and completing a desired device.
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