发明名称 |
MANUFACTURE OF MULTILAYER INTERCONNECTION STRUCTURE |
摘要 |
Prodn. of insulating layer with flat plane comprises the steps of: coating of the soln. of silylated low alkyl polysilsesquinoxane of formula (I) onto the circuit board having step difference of height; drying the solvent; melting the low alkyl polysilsesquinoxane to form a flat polymer plane; and curing the polymer. In the formula, R is methyl or ethyl; n= 50-2000. Pref. the silylated low alkyl polysilsesquinoxane is methyl polysilsesquinoxane having trimethysill terminating gp. and its ave. Mw is 7.0 x 103-2.7 x 105.
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申请公布号 |
KR900005894(B1) |
申请公布日期 |
1990.08.13 |
申请号 |
KR19870014659 |
申请日期 |
1987.12.21 |
申请人 |
FUJITSU CO., LTD. |
发明人 |
HUKUYAMA SUNICHI;YONEDA YASUHIRO;MIYAGAWA MASASHI;NISHI GODA;MATCHUURA ACHUMA |
分类号 |
H05K3/02;(IPC1-7):H05K3/02 |
主分类号 |
H05K3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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