| 摘要 |
PURPOSE:To perform a fast operation even under a low source voltage by employing a P-channel depletion type MOS transistor as the driving transistor of a driving circuit for an output load. CONSTITUTION:The source of the P-channel depletion type MOS transistor 3 is connected to a power source VDD, and the gate is connected to the output of a CMOS logic circuit part 1. The drain of an N-channel enhancement type MOS transistor 4 is connected to the drain of the P-channel depression type MOS transistor 3, which forms the output of a load driving circuit 2, and the source is grounded, and the gate is connected to the output of the CMOS logic circuit part 1 with the gate of the P-channel depression type MOS transistor 3. Thereby, since the charge of the output load is performed by the P-channel depletion type MOS transistor 3, the fast operation and an operation under the low source voltage can be performed. |
