| 摘要 |
A plating process system has been disclosed which provides for a strike bath, a low current density plating bath or a high speed plating bath, the last for production of electroplating deposits with current densities in excess of 200 ASF; additionally, the strike bath may be used with the low current density plating bath as a combination, or as another combination, the strike bath is with the high speed, high current plating bath; the advantages are a compatible strike and plating bath; nonstaining deposits; buffered pH operations; neutral pH; no free cyanide in bath; elimination of drag-in problems from a strike bath vessel to plating bath vessel; reduced drag-out from this bath; higher current density capability and higher current density for lower total initial concentration in solution when compared to commercial baths presently available; the deposits are especially useful for high purity integrated circuits and provide an alternate system to gold for microelectronic circuits without any increased operation requirements.
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