| 摘要 |
PURPOSE:To remove the crystal defect of the semiconductor device by a method wherein after P or Ar ions are implanted in a high concentration in the surface of single crystalline Si substrate, the surface region is annealed. CONSTITUTION:P or Ar ions are implanted in the single crystalline Si sufficiently deeper than an active region. At this time, the crystal defects 14 caused by the ion implantation are generated in the surface side of the formed getter layer 10. When it is heat-treated to anneal by a laser beam 16, the single crystal in the surface side 17 of the getter layer 10 is restored. By this constitution, because the getter effect is elevated, the heat-treatment temperature is reduced, necessary time can be shortened and moreover no restriction exists in the condition of the back face, so that the adhesion with a package, the ohmic interconnection can be insured sufficiently. |
