Semiconductor device having conductive polysilicon layer with wiring pattern and fabrication method thereof.

摘要

The invention relates to such semiconductor devices comprising: a wiring layer with a predetermined pattern formed over a major surface of a semiconductor substrate through an insulating film, a diffusion layer formed under a contact hole formed in said insulating film in an adjacent region of the wiring layer, and a conductive layer deposited into said contact hole in a state of being connected to said wiring layer.