Semiconductor memory device having improved sense amplifier arrangement,申请号US19880181950-传众专利搜索

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发明名称	Semiconductor memory device having improved sense amplifier arrangement
摘要
申请公布号	US4947377(A)	申请公布日期	1990.08.07
申请号	US19880181950	申请日期	1988.04.15
申请人	NEC CORPORATION	发明人	HANNAI, SEIICHI
分类号	G11C11/401;G11C7/06;G11C7/18;G11C11/4091;G11C11/4097	主分类号	G11C11/401
代理机构		代理人
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