| 发明名称 |
PRODUCTION OF GAAS LIGHT EMISSION DIODE |
| 摘要 |
PURPOSE:To obtain IR light emission GaAs diode having much improved external quantum efficiency by cleaning the surface of a chip by means of aquaous H2 O2 incorporated with NaOH. |
| 申请公布号 |
JPS5291662(A) |
申请公布日期 |
1977.08.02 |
| 申请号 |
JP19760007959 |
申请日期 |
1976.01.29 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
YOSHIDA MITSUO;KAMAZAKI KEIJI |
| 分类号 |
H01L21/314;H01L21/316;H01L33/30;H01L33/40 |
主分类号 |
H01L21/314 |
| 代理机构 |
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代理人 |
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| 地址 |
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