发明名称 Dynamic ram
摘要 A semiconductor memory is provided with a first memory cell group, a second memory cell group, a first register for a serial output operation for holding information related to the first memory cell group, a second register for a serial output operation for holding information related to the second memory cell group, and transfer means for transferring information related to either the first or second memory cell group to either the first or second serial output register. By virtue of this arrangement, while the information transferred to the first serial output register is being serially output therefrom, information can simultaneously be transferred to the second serial output register by the transfer means.
申请公布号 US4947373(A) 申请公布日期 1990.08.07
申请号 US19870134355 申请日期 1987.12.17
申请人 HITACHI, LTD.;HITACHI VLSI ENGINEERING CORP. 发明人 YAMAGUCHI, YASUNORI;SATO, KATSUYUKI;MITAKE, JUN;KAWAGUCHI, HITOSHI;YOSHIDA, MASAHIRO;OKADA, TERUTAKA;MORINO, MAKOTO;SAEKI, TETSUYA;YUKAWA, YOSUKE;NAGASHIMA, OSAMU
分类号 G11C11/4096 主分类号 G11C11/4096
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