| 摘要 |
PURPOSE:To obtain a high sensitivity thermo electromotive force by a method wherein a radiant energy is absorbed by evaporation conductors respectively evaporated at one end of an N type or a P type region, and a plurality of N type or P type regions are connected respectively in series. CONSTITUTION:On the surface of a disk formed P type semiconductor substrate 10, an impurity such as phosphorus is doped by an ion implantation method, etc., thus a plurality of L-shaped N type regions 11 are radially formed, and then a plurality of L-shaped conductors 12 are evaporated radially into a form symmetrical to this N region 11. Thereafter, a region 13, wherein the top ends of the N type region 11 and the conductor 12 are superposed at the center of the substrate 10, is blackened resulting in the formation of the group of measuring junctions, then N type regions are connected respectively in series, and thereby the resultant thermo electromotive force is obtained from a pair of electrodes T1 and T2. Besides, a P type semiconductor part 10 is formed so that the potential does not become more positive than any part of the N type semiconductor 11. |
