| 摘要 |
<p>PURPOSE:To eliminate a photoelectric effect and to provide the device which is stable and highly reliable by incorporating substantially no H into an a-Si film of a switching element consisting of the a-Si as its base material. CONSTITUTION:The inside surface of a substrate 11 consists of wiring electrodes 13, picture element electrodes 12 and a nonlinear resistance film 14. The nonlinear resistance film 14 consists of amorphous Si (a-Si) base material and the hydrogen component (H) in this base material is confined to 0 or <=1%. Namely, substantially no H is incorporated into the a-Si film. The photoelectric effect is eliminated in this way and the degradation in the contrast in a bright place is prevented. The change in the electric characteristics the cause for which is considered to be H when the element is driven for a long period of time is prevented and the stable electrooptical device having the high reliability is obtd.</p> |
