| 摘要 |
PURPOSE:To obtain a photoboltaic element of high efficiency especially for short wavelength light by forming a semiconductor deposition film (InN:H:F film) on a low cost substrate like glass, while said film has a crystal grain with diameter in a specified range and contains a specified amount of hydrogen atom. CONSTITUTION:The title device is an element generating photo-electromotive force by junctions between each of a P-type, an I-type and an N-type semiconductor layers. Either one of the P-type semiconductor layer or the N-type semiconductor layer is a polycrystalline semiconductor film which is composed of indium atom, nitrogen atom and hydrogen atom or fluorine atom and P-type or N-type valence electron control atom, and has a grain diameter of 50-900Angstrom . Hydrogen atom of 0.3-8% is contained therein. The I-type semiconductor layer is constituted of non-singlecrystalline silicon semiconductor composed of silicon atom and at least hydrogen atom or fluorine atom. Thereby, photoelectric conversion efficiency for short wavelength light can be improved, a large short circuit current can be led out by a high open circuit voltage, and the deterioration of characteristics can be remarkably reduced, so that a solar battery as a power supply system can be obtained. |
