R-T-B based permanent magnet

摘要

The present invention provides such a permanent magnet that its magnetic properties will not significantly decrease and it can be prepared at a lower temperature, compared to conventional R-T-B based permanent magnets. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Ce-T-B based crystal layer can be formed by alternatively stacking the R1-T-B based crystal layer and the Ce-T-B based crystal layer. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the crystallization temperature can be lowered by the Ce-T-B based crystal layer.

主权项

1. A R-T-B based permanent magnet, comprising
a R-T-B based structure in which a R1-T-B based crystal layer and a Ce-T-B based crystal layer are stacked, wherein: R1 represents at least one rare earth element selected from the group consisting of Nd, Pr, Dy, Tb, and Ho; T represents at least one transition metal element comprising Fe or a combination of Fe and Co; an atomic ratio of R1 to Ce is 0.1 or more and 10 or less; and each of the R1-T-B based crystal layer and the Ce-T-B based crystal layer has a thickness of 0.6 nm or more and 300 nm or less.