发明名称 THICK FILM CAPACITOR
摘要 The thick film capacitor comprises a sintered layer of a ferro- electric material, mainly consisting of one or more ferroelectric cpds. with a perovskite structure and an inorganic binder with a eutectic compsn. which produces a liquid phase at a temp. lower than a sintering temp. of the cpds. At least two electrodes are formed on both surfaces of the material. The ferro-electric cpds. include Pb(Fe1/2Nb1/2) O3-Ba(CU1/2W1/2)O3, BaTiO3 and PbTiO3. The inorganic binders include binary mixtures of oxides, e.g. PbO-CuO, PbO-WO3, BaO-WO3 etc. The binder promotes shrinkage of the inorganic cpds. o n sintering to provide a dense compsn. and good dielectric characteristic.
申请公布号 KR900005443(B1) 申请公布日期 1990.07.30
申请号 KR19870010596 申请日期 1987.09.24
申请人 TOSHIBA CORP. 发明人 YATSUMODO DAKAKI;FURUKAWA OSHAMU;IWASE NOBOO;HARADA MITSUO;SEGAWA MASAO
分类号 C04B35/497;C04B35/499;H01G4/12;H01G4/30;(IPC1-7):H01G4/12 主分类号 C04B35/497
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