| 摘要 |
PURPOSE:To enable obtaining of a wafer capable of providing uniform cathode luminescent images with hardly any microdefects appearing in AB etching by growing a single crystal and annealing the resultant wafer under specific conditions in two stages. CONSTITUTION:A grown compound semiconductor single crystal, e.g. semi- insulating undoped GaAs single crystal wafer grown by the liquid encapsulated Czochralski process, is sealed in a quartz ampule in a vacuum and kept at a temperature of 1100 deg.C to the melting point for >=30min to carry out annealing in the first stage. The resultant single crystal is then cooled to ambient temperature at 1-30 deg.C/min temperature decreasing rate. The obtained wafer is subsequently etched and then kept at 750-1100 deg.C temperature in a nonoxidizing atmosphere, such as Ar, N2 or H2, for >=20min to perform the annealing in the second stage. The wafer is subsequently cooled to ambient temperature to afford a compound semiconductor single crystal wafer capable of preparing an electronic device having stabilized characteristics.
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