| 摘要 |
The purpose of the present invention is to provide an etching method by which both selectively etching SiGe with respect to Si and selectively etching the Si with respect to the SiGe in a substrate to be processed, in which the SiGe and Si coexist, are performed in the same apparatus using the same gas system. The etching method includes: disposing a substrate to be processed including silicon and silicon-germanium within a chamber; and performing both selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying a ratio of F_2 gas to NH_3 gas in an etching gas that has a gas system including the F_2 gas and the NH_3 gas. |
