发明名称 PROCESS FOR PREPARING SILICON CARBIDE
摘要 <p>A process for preparing silicon carbide by carbothermal reduction involves rapidly heating a particulate reactive mixture of a silica source and a carbon source to form a product which shows improved uniformity of crystal size. The product of this process can be used to form a densified part. The process comprises: (1) passing a particulate reactive mixture (2, 4) of a silica source and a carbon source into a reactor having (a) a reactant transport member (6), the reactant transport member having a wall defining a hollow conduit, the wall having a cooling means and being further characterized as having a concentric inner wall defining an inner annular space (20), the inner annular space having an inlet and being open at the bottom such that a gas can be flowed therethrough; (b) a reactor chamber (1, 6), the reactor chamber having a wall (2, 6) defining a reaction zone (2, 8), the chamber being in fluid connection with the reactant transport member.</p>
申请公布号 WO1990008104(A1) 申请公布日期 1990.07.26
申请号 US1989000114 申请日期 1989.01.11
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