发明名称 Plasma processing apparatus, plasma processing method and high frequency generator
摘要 A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.
申请公布号 US9418822(B2) 申请公布日期 2016.08.16
申请号 US201414177421 申请日期 2014.02.11
申请人 TOKYO ELECTRON LIMITED 发明人 Kaneko Kazushi;Matsumoto Naoki;Koyama Koji;Funazaki Kazunori;Kato Hideo;Ishibashi Kiyotaka
分类号 H01J37/32;H05H1/46;H03L5/02 主分类号 H01J37/32
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A plasma processing apparatus that performs a process on a processing target object by using plasma, the apparatus comprising: a processing vessel configured to perform therein the process by the plasma; and a plasma generating device, having a high frequency generator which is provided outside the processing vessel and is configured to generate a high frequency wave, configured to generate the plasma within the processing vessel by using the high frequency wave generated by the high frequency generator, wherein the high frequency generator comprises: a high frequency oscillator configured to generate a high frequency wave; a waveguide configured to propagate the high frequency wave generated by the high frequency oscillator to the processing vessel serving as a load side; a power supply configured to supply a voltage to the high frequency oscillator; a traveling wave power measuring device configured to measure a power of a traveling wave that propagates to the load side; a reflected wave power measuring device configured to measure a power of a reflected wave reflected from the load side; a voltage control device configured to control the voltage supplied to the high frequency oscillator by the power supply; and a directional coupler configured to output the traveling wave and the reflected wave propagating in the waveguide to the voltage control device, wherein the voltage control device comprises: a load control device configured to supply, to the high frequency oscillator, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the reflected wave power measuring device to the power of the traveling wave measured by the traveling wave power measuring device.
地址 Tokyo JP