| 摘要 |
PURPOSE:To obtain uniform electrical characteristics by preliminarily measuring the influence of a proximity effect and previously correcting the size of a mask pattern while using an error section generated as a correction value. CONSTITUTION:Patterns are formed preliminarily by employing mask patterns from which a proximity effect is generated and which are shaped previously in various size. The relationship of these mask size and the measured size of the patterns formed is obtained, mask size corresponding to pattern size required from relationship acquired is obtained, and the size of the mask patterns is corrected on the basis of the difference of these both pattern size. Accordingly, a proximity effect is eliminated, and the variation of the pattern size of repeating sections, repeating end sections and isolated pattern sections is inhibited: this equalizes the electrical characteristics of a semiconductor device and improving reliability thereof. |
